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| Transistor 2SD2565 Silicon NPN triple diffusion planer type For high voltage-withstand switching Unit: mm 6.90.1 0.15 1.05 2.50.1 0.05 (1.45) 0.8 0.5 4.50.1 0.7 4.0 s Features q q q q q High collector to base voltage VCBO. High collector to emitter voltage VCEO. Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.65 max. 1.0 1.0 0.2 0.45-0.05 0.45-0.05 +0.1 +0.1 2.50.5 1 2 2.50.5 3 (Ta=25C) Ratings 400 400 5 1 0.5 1 150 -55 ~ +150 Unit V V V A A W 1.20.1 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature *1 Symbol VCBO VCEO VEBO ICP IC PC*1 Tj Tstg Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1:Emitter 2:Collector 3:Base MT2 Type Package C C 0.45+0.1 - 0.05 0.65 max. Printed circuit board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion 2.50.1 s Absolute Maximum Ratings (HW type) s Electrical Characteristics Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Storage time Fall time (Ta=25C) Symbol VCBO VCEO VEBO hFE VCE(sat) VBE(sat) fT Cob ton tstg tf Conditions IC = 100A, IE = 0 IC = 500A, IB = 0 IE = 100A, IC = 0 VCE = 5V, IC = 30mA IC = 250mA, IB = 50mA* IC = 250mA, IB = 50mA* VCB = 30V, IE = -20mA, f = 200MHz VCB = 30V, IE = 0, f = 1MHz IC = 100mA IB1 = 10mA, IB2 = -10mA VCC = 200V 30 6 0.8 3.7 0.6 * min 400 400 5 30 typ max 14.50.5 Unit V V V - 1.5 1.5 V V MHz 20 pF S S S Pulse measurement 1 Transistor PC -- Ta 2.0 300 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Ta=25C 250 IB=10mA 9mA 8mA 7mA 6mA 5mA 150 4mA 100 3mA 2mA 50 1mA 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 2SD2565 IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) 10 3 1 0.3 0.1 0.03 0.01 0.003 0.001 1 3 10 30 100 300 1000 Ta=75C 25C -25C VCE(sat) -- IC IC/IB=5 Collector power dissipation PC (W) Collector current IC (mA) 1.6 200 1.2 0.8 0.4 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (mA) VBE(sat) -- IC 100 hFE -- IC Collector output capacitance Cob (pF) IC/IB=5 60 VCE=5V 24 Cob -- VCB f=1MHz IE=0 Ta=25C Base to emitter saturation voltage VBE(sat) (V) 30 10 3 25C 1 0.3 0.1 0.03 0.01 1 3 10 30 100 300 1000 Ta=-25C 75C Forward current transfer ratio hFE 50 Ta=75C 40 25C 30 -25C 20 20 16 12 8 10 4 0 1 3 10 30 100 300 1000 0 1 3 10 30 100 Collector current IC (mA) Collector current IC (mA) Collector to base voltage VCB (V) 2 |
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